重频光脉冲对半绝缘GaAs光导开关损伤分析  

Analysis of Damage Induced by Repetition-Frequency Optical Pulse in Semi-insulating GaAs PCSS′s Material

作　　者：向珊[1] 戴慧莹[1] 施卫[2] 

机构地区：[1]空军工程大学理学院,西安710051 [2]西安理工大学理学院,西安710084

出　　处：《半导体技术》2012年第1期74-77,共4页Semiconductor Technology

摘　　要：通过波长为1 064 nm的重频激光光脉冲触发半绝缘GaAs光导开关损伤测试实验,观察脉冲激光触发过程中光电导开关电阻率的变化,对比低重频(<1 kHz)和高重频的激光脉冲对GaAs光电导开关芯片的损伤阈值,分析了不同重复频率的激光脉冲引起光导开关芯片材料光损伤的主要原因,并探讨了损伤机理。研究表明,在重复频率激光作用下GaAs光导开关芯片材料的破坏阈值比在单脉冲作用下低,且不同重复频率的激光辐照下材料表面的温升速率不同。当激励光脉冲重复频率较低(<1 kHz)时,芯片内的温升效应不显著,此时光损伤与重复频率无明显依赖关系,主要损伤机制为微损伤累积;而当重复频率较高时,开关材料内热积累引起的损伤占主要地位。Based on the damage test of GaAs photoconductive semiconductor switch （PCSS） triggered by nanosecond laser pulse with 1 064 nm wavelength at different repetition frequencies, the main reasons of optical injury in switch chip material at different repetition frequencies were analyzed by comparing the damage threshold of materical and observing the change of resistivity values when the switch was on/off, and the damage mechanism was discussed. Experiment results show that the damage threshold of semi-conductor material irradiated by repetition-frequency laser is lower than by single impulse. And the input laser with different repetition frequencies may cause different temperature rising speeds on the surface of material. It is pointed out that when the repetition frequency is less than 1 kHz, the temperature accumulation effect in the material dose not perform significantly. The reason of the damage induced by low-repetition frequency laser should be micro-damage accumulation. There is no significant relationship between optical injury in material and repetition rate. When the pulse laser is at high repetition frequency, the temperature rising rate in the laser irradiation area gets faster, and the optical damage is mostly caused by thermal accumulation.

关 键 词：半绝缘砷化镓 重复频率 损伤阈值 电阻率 微损伤累积 

分 类 号：TN252[电子电信—物理电子学]