磁控溅射氧化钛薄膜的电学特性研究  

Investigations of Electronic Properties of TiO_x Thin Films by DC Reactive Magnetron Sputtering

作　　者：李林[1] 吴志明[1] 居勇锋[1] 蒋亚东[1] 

机构地区：[1]电子科技大学光电信息学院,电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子器件》2011年第6期625-628,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(60736005)

摘　　要：采用直流磁控溅射法在K9玻璃上制备了不同溅射温度和氧气流量的氧化钛(TiOx)薄膜。采用XPS、霍尔效应测试仪对薄膜的组份、载流子浓度和迁移率进行了测试,发现随着溅射氧气流量的增大,薄膜中的氧元素比例增大,载流子浓度减小,迁移率增大。分析了TiOx薄膜的电阻温度系数(TCR)与溅射温度和氧分压的关系,薄膜的电阻率从0.01Ω.cm上升到2Ω.cm时,TCR值从-1.3%上升到-2.14%。同一温度制备的TiOx薄膜随着氧气流量的增大TCR增大;方阻值相同的TiOx薄膜,随着制备温度的提高其TCR增大。TiOx films were deposited on K9 glass substrates by using a dc sputtering technique at different sputtering tem- perature and oxygen partial pressure. The composition, carrier concentration and mobility of the deposited film were measured by X-ray Photoelectron Spectroscopy （XPS）and Hall Effect Measurement, respectively. It was found that the ratio of oxygen and titanium composition increased with the increasing of oxygen partial pressure, while the cartier con- eentration decreased and the mobility increased. The temperature coefficient of resistance （TCR）of the TiO, films were also studied as a function of the oxygen flow and growth temperature. The results showed that when the resistivities of the as-deposited films ranged from 0.01Ω.cm to 2 Ω.cm,the TCR of the films increased with the oxygen flow in the same growth temperature, and increase with the same sheet resistance ,it could also increase with the growth temperature.

关 键 词：TiOx薄膜 霍尔效应 X射线光电子能谱 电阻温度系数 

分 类 号：TN305.9[电子电信—物理电子学]