激光钻孔技术对氮化镓LED特性的影响  

Effect of Laser Drilling Technology on the Characteristics of GaN Light-emitting Diodes

作　　者：王维昀 陈隆建[2] 彭少鹏 吴煊梁 毛明华 

机构地区：[1]东莞市福地电子材料有限公司,广东东莞523077 [2]国立台北科技大学光电工程系,台北10608

出　　处：《固体电子学研究与进展》2011年第6期596-600,共5页Research & Progress of SSE

基　　金：粤港关键领域重点突破项目(2009205104)

摘　　要：研究利用激光钻孔技术应用于氮化镓发光二极管,是利用高能激光束将蓝宝石基板打出孔洞,并在孔洞内壁蒸镀金属层薄膜,藉以利用金属导热良好的特性,将表面热能传导至基板,并利用封装技术配合,使得热能顺利从底座散去,降低热效应带来的影响。通过实验获得:在注入电流700mA下,打孔较未打孔的氮化镓发光二极管,光输出功率增加约77%;在操作电流350mA注入下,打孔较未打孔的氮化镓发光二极管,散热效率约增加15%。In this paper, the application of laser drilling technology to the GaN light-emitting diode （LED） is studied. The holes on a sapphire substrate are formed by using a high-energy laser beam and then a thin metal layer is deposited in the hole wall. Based on the good property of the metal thermal conductivity, the heat energy on the surface can be well conducted to the substrate and successfully disspated from the base with the use of Packaging technology resulting in lower thermal effect. The optical measurements show that for the GaN-based LED with holes, the light output power is incresed by 77% at 700 ciency is increased by 15% at 350 mA operating holes. mA hight injection current and the cooling efficurrent respectively comparing to that without holes.

关 键 词：激光钻孔 氮化镓发光二极管 

分 类 号：TN24[电子电信—物理电子学] TN312.8