Mn掺杂对ZnO薄膜结构及发光性能的影响(英文)  

Structural and Photoluminescence Analysis of Mn-doped ZnO thin Films

作　　者：陈香存[1] 康朝阳[1] 杨远俊[1] 徐彭寿[1] 潘国强[1] 

机构地区：[1]中国科学技术大学,安徽合肥230029

出　　处：《发光学报》2011年第12期1247-1250,共4页Chinese Journal of Luminescence

基　　金：Supported by the National Natural Science Foundation of China(11079032)~~

摘　　要：利用脉冲激光沉积的方法在Si衬底上生长出了c轴高度取向的Mn掺杂ZnO薄膜。X射线衍射表明所有样品都具有纤锌矿结构,没有发现其它相,随着掺杂量的增加,c轴晶格常数增大。原子力显微镜结果显示:Mn的掺杂引起了ZnO薄膜表面粗糙度的变化。由光致发光谱发现,在387 nm附近出现了由于近带边自由激子复合引起的紫外峰,还有以430和545 nm为中心的较宽发光峰,结果表明:掺入到ZnO薄膜中的Mn以+2价的价态存在,掺Mn以后的ZnO薄膜带隙变大,缺陷能级也发生了改变,在发光谱中表现为紫外峰的蓝移,可见光部分430 nm和545 nm位置处发光峰的红移。Zn1-xMnxO thin films were successfully grown on Si（111） substrates by pulsed laser deposition（PLD）.X-ray diffraction measurement revealed that all the films were single phase and had wurtzite structure with c-axis orientation.As Mn concentration increased in Zn1-xMnxO films,the c-axis lattice constant increased gradually.Atomic Force Microscopy（AFM） showed that surface roughness and morphology changed with doping concentrations.Photoluminescence spectra of Zn1-xMnxO thin films were also studied which shows a narrow UV band at 387 nm,a broad blue band of 430 nm and another broad peak at 545 nm.It was deduced that Mn doping leads to a blue shift of the UV band,and a red shift of 430 nm and 545 nm.

关 键 词：X射线衍射 光致发光 ZNO薄膜 脉冲激光沉积 

分 类 号：O482.31[理学—固体物理]