Zn_(1-x)Mg_xO薄膜中缺陷诱导的室温铁磁性  

Defect-induced room temperature ferromagnetism in Zn_(1-x)Mg_xO thin films

作　　者：黄文娟[1] 方庆清[1] 王伟娜[1] 吴克跃[1] 张瀚铭[1] 张启平[1] 

机构地区：[1]安徽大学物理与材料科学学院,安徽合肥230039

出　　处：《磁性材料及器件》2011年第6期27-30,72,共5页Journal of Magnetic Materials and Devices

基　　金：安徽省自然科学基金资助项目(090414177)

摘　　要：采用脉冲激光沉积(PLD)方法在单晶Si(100)衬底上制备Zn1-xMgxO(x=0.075,0.15,0.35,0.65)薄膜,研究了不同Mg含量掺杂、氧压、退火温度对其磁性的影响。分析表明,Mg掺杂量会影响薄膜中的缺陷浓度,进而影响缺陷周围离子中的自旋极化效应,对薄膜磁性产生影响。氧压的增大会使Zn0.925Mg0.075O薄膜中锌位氧(OZn)缺陷浓度增大,但是,缺陷浓度过大又会使薄膜中出现缺陷对,这些影响使薄膜磁性随氧压的增大先增大后减小。而后续退火会影响薄膜结晶质量和缺陷浓度,也会对薄膜磁性产生影响。上述三个因素对Mg掺杂ZnO薄膜磁性的影响都与薄膜中的缺陷浓度变化有关。Zn1-xMgxO （x=0.075, 0.15, 0.25, 0.35, 0.65） thin films with single crystal Si（100） substrate have been prepared by pulsed laser deposition（PLD） in vacuum and oxygen atmosphere. The influence of Mg doping content, oxygen pressure and annealing temperature was investigated on the magnetism of ZnO thin films. The analytical results suggest that the Mg doping content would affect the concentration of defect of thin films and resultantly the spin polarization effect of ions around defects, which would affect the magnetism of thin films. The concentrate of Ozn increase with increasing oxygen pressure, but too high concentrate of defects would make the defect-couple emerge,which makes the magnetism in thin fi]lms increase first and then decrease. Annealing affects the crystallization and the amount of defects, which also would affect the magnetism of thin films. The dependence of magnetism in Mg doped ZnO on the three factors above mentioned has relationship with the variation of defect concentration.

关 键 词：ZNO薄膜 Mg掺杂 室温铁磁性 缺陷 

分 类 号：O484.43[理学—固体物理] TN304.7[理学—物理]