提高RF MEMS开关速度的电压控制方法  

Voltage Control Approach to Improve the Speed of RF MEMS Switches

作　　者：邓成[1] 鲍景富[1] 凌源[1] 杜亦佳[1] 赵兴海[2] 郑英彬[2] 

机构地区：[1]电子科技大学电子工程学院,成都611731 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微纳电子技术》2012年第1期39-44,55,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金委员会和中国工程物理研究院联合基金资助项目(11176006);国家部委基金项目(9140A23070311DZ0210);中国工程物理研究院科学技术发展基金资助项目(2008A0403016)

摘　　要：针对RF MEMS开关释放时间过长的问题,提出了一种电压控制方法有效地缩短了开关的释放时间,提高了开关的速度。这种方法无需修改器件设计,仅需要调整偏置电压变化形式,用线性压降替代传统的阶跃压降,就能有效抑制MEMS梁在释放过程中的振动。给出了这种方法的相关理论、等效模型及仿真结果。由ANSYS仿真结果可知,在标准大气压下,采用28μs单段线性压降后,梁的释放时间从103μs缩短到62.5μs;采用26μs双段线性压降后,梁的释放时间进一步缩短到26μs,仅为原来的1/4,即开关速度约为原来的4倍。The voltage control approach was presented to shorten the release time of the RF MEMS switch effectively, and the switching speed was improved. This method can inhibit the MEMS beam vibration in the release process effectively, which does not need to modify the device design, only need to adjust the bias voltage changing form and replace the traditional step representation pressure drop with the linear pressure drop. The correlation theory, equivalent model and simulation result of the approach were given. The ANSYS simulation results indicate that in the standard atmospheric pressure, the beam release time reduces from 103μs to 62.5 μs with 28 μs single ramped bias voltage drop; and the beam release time furtherly reduces to 26μs with 26 μs double ramped bias voltage drops, which is a quarter of the original release time, that is, the speed of the switch is abom four times of the original speed.

关 键 词：RF MEMS开关 释放时间 开关速度 梁振动 偏置电压 

分 类 号：TH703[机械工程—仪器科学与技术] TN631[机械工程—精密仪器及机械]