用正电子湮没谱研究半导化掺杂的ZnO压敏陶瓷  

POSITRON ANNIHILATION STUDY ON ZnO VARISTOR CERAMIC DOPED WITH SEMI-ADDITIVES

作　　者：杨铁柱[1] 

机构地区：[1]郑州科技学院基础部,郑州450064

出　　处：《中国陶瓷》2012年第1期36-38,共3页China Ceramics

摘　　要：用正电子湮没技术研究了半导化掺杂的ZnO压敏陶瓷,发现在配方配方ZnO-Bi2O3-TiO2-Co2O3-MnO2中掺杂半导化添加剂Z、ZN、ZCr和ZT后,商谱谱峰依次降低;正电子寿命依次增加。其中掺杂ZT的样品三电性能参数比较理想,分别为E1mA=17V/mm,α=18,IL=37。The artical concerns with the influence on ZnO varistor ceramic doped with semiconducting additives by Positron Annihilation Tectmique（PAT）. We found when doping Z. ZN. ZCr and ZT in different samples respectively, the peak of ratio curves reduces and the positron lifetime increases in sequence. And the electrical performance parameters of samples doped with ZT are optimal, with breakdown voltage E1mA=17V/ ram, nonlinear coefficient a =18, leakage current IL=37μ A.

关 键 词：正电子湮没技术 半导化掺杂 商谱 正电子寿命 电性能参数 

分 类 号：TN304.93[电子电信—物理电子学]