有机气相沉积中薄膜生长的模拟研究  

Simulation of thin film growth in organic vapor phase deposition

作　　者：陈文彬[1] 李国栋[1] 胡琛[1] 闫思家[1] 芮大为[1] 赵启义[1] 

机构地区：[1]电子科技大学光电信息学院,四川省显示科学与技术重点实验室,四川成都610054

出　　处：《功能材料》2012年第1期21-23,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(20472060);四川省应用基础研究资助项目(JY0003)

摘　　要：通过对有机气相沉积中气体的传输过程进行模拟,略述了OVPD传输的基本机制。利用蒙特卡洛法对有机蒸气通过掩膜孔的动力学沉积过程进行仿真,仿真结果表明薄膜的形状受沉积参数的影响,例如,分子平均自由程(沉积压强)、掩膜板的尺寸以及掩膜板至基板的距离。分析表明,通过缩小掩膜板至基板的距离,同时减小沉积压强可以提高所成薄膜图案的分辨率,减小掩膜板的厚度可以提高材料的使用效率。The transport regime in OVPD system was briefly described by modeling the transport process. The simulation of dynamical deposition of organic vapor through apertures employing monte carlo method shows that the deposition pattern shape was affected by the process parameters such as molecular mean free path （deposition pressure）, the aperture geometry and the mask-to-substrate separation. The simulation discussed here indicates that a high pattern definition could be achieved by reducing the space of mask-to-substrate and by decreasing the deposition pressure. The using efficiency of materials could be improved by using a thinner mask.

关 键 词：有机气相沉积 蒙特卡洛 沉积参数 分辨率 

分 类 号：TB43[一般工业技术]