注入剂量和低温退火对硅离子注入热氧化硅层发光特性的影响  

Effects of implantation dose and annealing temperature on photoluminescence properties of si implanted silicon oxide films

作　　者：赵勇[1] 侯硕[1] 俞进[1] 方利广[1] 郑军[1] 盛广沪[1] 

机构地区：[1]南昌大学理学院,江西南昌330031

出　　处：《南昌大学学报（理科版）》2011年第6期535-540,共6页Journal of Nanchang University(Natural Science)

基　　金：国家自然科学基金资助项目(11005059);江西省教育厅青年学者基金资助项目(GJJ09424)

摘　　要：采用金属蒸气真空弧(MEVVA)离子源制得了SiO2:Si辐照层。样品的室温可见PL谱峰位集中在560～700nm的4个谱带;Raman谱表明样品中没有纳米硅晶形成,XPS谱检测到富氧和缺氧两种价键结构。560nm发光中心起源于氧化硅层中的富氧结构缺陷SPR,620～700nm的谱峰均源自非桥氧空穴中心NBOHC。研究了注入剂量和退火温度对缺陷发光特性的影响。结果表明,当Si离子注入剂量小于6×1016 cm2时,伴随注入剂量的增加观察到PL谱带强度单调上升;当注入剂量超过6×1016 cm2时,因过量离子注入引发的浓度猝灭致使PL谱带发光强度显著减弱;注入剂量6×1016 cm2的样品在200～500℃温度范围内退火后相应的PL谱两个子谱带呈现相反的温度变化趋势,这种差异是由于作为发光中心的SPR和NBOHC具有不同的热诱导生长机制而导致的。Si doped silicon oxide films were prepared using MEVVA ion source implanter.Si ion beams with constant energy and various doses were implanted into SiO2 films thermally grown by dry oxidation method.Photoluminescence（PL） spectrum observed in the samples were mainly composed of four bands which were centered at wavelength of 560 nm,580 nm,620 nm and 650 nm,respectively.In order to investigate the effect of implantation dose and annealing temperature on defect luminescence in as-implantation samples,Raman and XPS were employed for analyzing chemical structures of the as-implanted films.The results of Raman spectra showed the films were amorphous and none of Si nanocrystals were found in all the samples;XPS spectra indicate there exist both oxygen deficient and oxygen sufficient structures in the as-implanted samples.The 560nm band originates from the oxygen sufficient defects SPR（small peroxy radicle） that were introduced by ion irradiation.The bands in the range of 620~700 nm were attributed to NBOHC（non bridge oxygen hole centre） defects which are intrinsic in silica and ion irradiation will increase the concentration.The PL integral intensity increases with the elevating of implantation doses of Si ion beam at the range from 2×1016 /cm2 to 6×1016 /cm2 due to the increased defect concentration,but while the implantation dose is higher than 6×1016 /cm2,decreasing of PL intensity were prominent due to the concentration quenching effect.Annealing temperature have different effects on the two kind sub-PL bands in the samples implanted with dose of 6×1016 /cm2,this is suggested to be the result of SPR and NBOHC have different thermodynamic stability as luminescence centers.

关 键 词：离子注入 氧化硅 缺陷发光 辐照损伤 

分 类 号：O482.31[理学—固体物理]