磁控溅射技术室温生长氢化ZnO：Ga薄膜及其特性研究  

Growth and Characteristics of Hydrogenated Ga-doped ZnO Thin Films by Pulsed DC Magnetron Sputtering at Room Temperature

作　　者：王斐[1] 陈新亮[1] 张翅[1] 张德坤[1] 魏长春[1] 黄茜[1] 张晓丹[1] 赵颖[1] 耿新华[1] 

机构地区：[1]南开大学光电子薄膜器件与技术研究所,南开大学光电子薄膜器件与技术天津市重点实验室,南开大学光电信息技术科学教育部重点实验室,天津300071

出　　处：《人工晶体学报》2011年第6期1404-1409,共6页Journal of Synthetic Crystals

基　　金：国家重点基础研究发展计划(973计划)(2011CAA00705,2011CAA00706,2011CAA00707);国家高技术研究发展计划(863计划)(2009AA050602);科技部国际合作项目(N2009DFA62580);天津市应用基础及前沿技术研究计划项目(09JCYBJC06900);中央高校基本科研业务费专项资金项目(65010341)

摘　　要：采用直流脉冲磁控溅射方法,在室温下生长氢化Ga掺杂ZnO薄膜(GZO/H),并通过湿法后腐蚀技术获得绒面结构。研究了室温下H2流量对薄膜结构、光电性能及表面形貌的影响。实验表明,氢化GZO(GZO/H)薄膜具有良好的(002)晶面择优取向生长,引入适当流量的H2可以有效提高薄膜的电学特性,GZO/H薄膜具有更低的电阻率以及较高的迁移率和载流子浓度。当通入H2流量为6 sccm时,薄膜电阻率为6.8×10-4Ω.cm,Hall迁移率达34.2 cm2/V.s,制备的GZO/H薄膜可见光区域平均透过率优于85%。此外,研究了H2流量对湿法腐蚀后绒面GZO/H薄膜表面形貌的影响,提出了一种薄膜绒面结构形成过程模型。Hydrogenated Ga-doped ZnO thin films （ZnO： Ga/H, GZO/H） for thin film solar cells were deposited by pulsed DC magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of GZO/H films and textured surface GZO/H films were investigated with different H2-flow. The results indicated that all the GZO/H thin films are polycrystaUinestructure with a preferential orientation of the c-axis perpendicular to the substrate. The GZO/H thin films show a rather lower resistivity and a higher relatively carrier concentration and mobility than the GZO thin films. The GZO/H thin film grown at 6 sccm of H2-flow rate shows an excellent electrical property with aresistivity of×10^-4Ω·cm, and a Hall mobility of 34.2 cm2/Vs. The optical transmission of the GZO/H thin films have a great increase in short wave length when added H2 into vacuum during sputtering processes, and the optical transmission of the AZO/H thin films are 〉 85% in the visible range. In addition, the effects of H2-flow on structure of the GZO/H films after wet etching have been studied. The formation model of textured surface GZO/H films is introduced.

关 键 词：脉冲磁控溅射 氧化锌 镓掺杂 H2流量 绒面结构 

分 类 号：TG356.28[金属学及工艺—金属压力加工]