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出 处:《物理化学学报》2012年第2期489-493,共5页Acta Physico-Chimica Sinica
基 金:supported by the National Natural Science Foundation of China(60771019);Tianjin Key Research Program of Application Foundation and Advanced Technology,China(11JCZDJC15300)~~
摘 要:采用双槽电化学腐蚀法在P型单晶硅表面制备两种多孔硅.根据它们的孔径将它们分为介孔硅和大孔硅.使用扫描电子显微镜(SEM)观察两种多孔硅表面和断面形貌,介孔硅和大孔硅的表面化学键用傅里叶变换红外(FTIR)光谱仪来研究,通过I-V特性测试表征两种多孔硅电学特性,随后在室温下测试其气敏特性.结果表明:介孔硅具有较高的气体灵敏度,大孔硅具有较好的气体响应恢复特性.介孔硅对NO2气体具有较好的选择性,大孔硅对NH3气体具有较好的选择性.Two different kinds of porous silicon (PS) were grown by electrochemical corrosion in a double-tank cell on the surface of single-crystalline P-type silicon. According to their pore sizes, they were denoted as meso-porous silicon (meso-PS) and macro-porous silicon (macro-PS). The surface and cross-section morphologies of the PS were observed by scanning electron microscope (SEM). The surface chemical bonds of the meso-PS and macro-PS were investigated by Fourier transform infrared (FTIR) spectroscopy. The electrical properties of the PS were studied by measuring the I-V characteristics. The gas sensing properties of meso-PS and macro-PS were thoroughly measured at room temperature. Meso-PS has much higher sensitivity, while macro-PS has better response-recovery characteristics. Meso-PS shows better selectivity for NO2, while macro-PS shows better selectivity for NH3.
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