一种NAND Flash存储器抗辐射加固方法  

A Method of Radiation Hardening for NAND Flash Memories

作　　者：易伟 徐欣 聂洪山 

机构地区：[1]国防科学与技术大学电子科学与工程学院,长沙410073

出　　处：《微处理机》2011年第6期8-11,共4页Microprocessors

摘　　要：随着宇航事业的飞速发展,迫切需要一种稳定的非易失存储器,NAND闪存具有功耗小、速度快等特点,在宇航领域有广阔的应用前景。分析了NAND Flash的辐射效应和错误模式,设计了一种基于RS(Reed-Solomon)-RM(R-eed-Muller)级联纠错编码的软件加固方法,该码具备很强的纠随机错误和突发错误的能力。级联码译码器中采用流水线技术以及兵乓操作进行加速,数据吞吐率得到保证。With the development of astronavigation, a stable non - volatile memory is urgently needed. NAND Flash, due to its versatile features such as solid - state reliability, low power consumption, is very fit for space applications. The paper analyzes the radiation effects and error mode of NAND Flash. A concatenated coding Scheme for soft hardening based on Reed - Solomon code and Reed - Muller code was built. This code is capable of correcting random and burst errors. Pipelining and double buffers technology were used in the concatenated code, so the decoder can gain a very high speed.

关 键 词：NAND闪存 辐射效应 RS—RM码 软件加固 

分 类 号：TN918.91[电子电信—通信与信息系统]