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机构地区:[1]东南大学国家ASIC系统工程技术研究中心,江苏南京210096 [2]苏州英诺迅科技有限公司&苏州市射频功率器件及电路工程技术研究中心,江苏苏州215123
出 处:《电视技术》2012年第3期32-35,共4页Video Engineering
基 金:江苏省科技支撑计划工业部分重点项目(BE2010129);江苏省科技型企业技术创新资金(SBC201010291)
摘 要:提出一种具有3级结构的微波Colpitts混沌振荡器,这种新的结构通过增加共基极组态的三极管抑制了电路中三极管寄生电容的负面影响,以提高微波Colpitts混沌振荡器的基本振荡频率和频带宽度。借助Matlab和HSPICE软件对新结构的理想非线性动力学模型和电路进行了时域和频域分析。选用截止频率为9 GHz的三极管时,模型的电路仿真结果表明,新结构的基本振荡频率可达到4.9 GHz;信号的频谱分布更为均匀平坦,10 dB带宽可以达到4.9 GHz。In this paper, a novel microwave chaotic Colpitts oscillator is proposed,which contains three bipolar junction transistors connecting in series. In the novel structure, the negative influence of the parasitic capacitance of transistors is suppressed significantly, so that increasing the fundamental frequency of oscillation and expanding the bandwidth. According to ideal nonlinear dynamic model of the novel structure, the analysis based on Matlab and HSPICE are performed both in time and frequency domain with 9 GHz threshold frequency transistors. Simulation results show that, comparising with the two-stage oscillator, the maximum fundamental frequency of the proposed structure can be increased by 96% coming up to 4. 9 GHz, its 10 dB bandwidth could expand to 4. 9 GHz and the signal spectrum is smoother within the bandwidth.
分 类 号:TN752.5[电子电信—电路与系统]
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