反谐振反射光波导型VCSEL侧向辐射损耗的分析  

Analysis of the Lateral Radiation Losses of Anti-resonant Reflecting Optical Waveguide-type Vertical-cavity Surface-emitting Laser

作　　者：魏晓航[1] 邓军[1] 徐晨[1] 苗霈[1] 毛明明[1] 李建军[1] 韩军[1] 

机构地区：[1]北京工业大学光电子实验室,北京100022

出　　处：《半导体光电》2011年第6期769-772,共4页Semiconductor Optoelectronics

基　　金：国家自然科学基金资助项目(61076044)

摘　　要：使用柱坐标的传输矩阵法计算并分析了在反谐振反射光波导(ARROW)型垂直腔面发射激光器(VCSEL)中,不同的第一包裹层厚度对应的基模和一阶横模的侧向辐射损耗。与传统平板近似的方法相比,该方法更为精确地计算出了损耗的值,同时更为详细地表明了损耗随第一包裹层厚度变化的规律。并且指出第一包裹层的最佳厚度并不一定是传统认为的使基模得到反谐振效果即侧向辐射损耗最小时的值,而需要综合考虑基模和一阶模的侧向损耗。这对ARROW型VCSEL的设计具有重要的指导意义。For anti-resonant reflecting optical waveguide （ARROW） vertical-cavity surface- emitting laser （VCSEL）, transfer matrix method in the cylindrical coordinates is used to analyze the lateral radiation losses of the fundamental mode and first mode with different thickness of the first clad. Compared with the traditional planar approximation method, this method can calculate the loss more precisely, and it shows the discipline of the losses with the thickness of the first clad more clearly. Furthermore, it is indicated that the best thickness of the first clad is not necessarily the value when the fundamental mode is resonant. And both the lateral radiation losses of the fundamental mode and first mode should be considered.

关 键 词：激光器 侧向辐射损耗 传输矩阵法 反谐振反射光波导 垂直腔面发射激光器 

分 类 号：TN243[电子电信—物理电子学]