808nm网状电极高功率垂直腔面发射激光器  

High-power 808nm VCSEL with Reticular Electrode

作　　者：冯大伟[1] 袁中朝[2] 冯源[3] 郝永芹[3] 

机构地区：[1]长春理工大学科技园,长春130022 [2]重庆光电技术研究所,重庆400060 [3]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《半导体光电》2011年第6期781-784,897,共5页Semiconductor Optoelectronics

摘　　要：为改善高功率垂直腔面发射激光器(VCSEL)电流注入均匀性,提高光束输出质量和器件的输出功率,设计并研制出808nm高功率网状电极VCSEL。将VCSEL P面的注入电极由传统的环形结构改为网状结构并且热沉位于N面电极。实验制备了出光孔径同为500μm的传统环形电极和网状电极两种高功率VCSEL,并对器件的性能进行了对比测试。测试结果表明,网状电极结构高功率VCSEL相对传统环形电极结构高功率VCSEL器件具有良好的光电特性,室温下新结构高功率VCSEL的阈值电流为430mA,斜率效率为0.44mW/mA,电光转换效率可达21.7%,最大输出功率可达420mW,是传统结构高功率VCSEL输出功率的2.27倍。Novel high-power 808 nm vertical-cavity surface-emitting lasers （VCSEL） with the reticular electrode are designed to improve the injected current uniformity, beam output quality and output power. Conventional circular injection electrode of P side is turned into reticular one and the heat sink is put on the N side. Two high-power VCSELs with 500 t^m aperture were fabricated respectively with conventional circular electrode and reticular one. Performance of both VCSELs was tested comparatively. Test results show that VCSEL with the reticular electrode, in comparison with the device with traditional structure, has better photoelectric characteristics, greatly improving the uniformity in current distribution and emission, and decreasing the spatial hole burning phenomenon. At room temperature the threshold current of new structure device is 430mA and the differential efficiency is 0.44 W/A. The power conversion efficiency is 21.7% and the peak output power can reach 420 mW, which is 2.27 times higher than traditional high power VCSEL.

关 键 词：垂直腔面发射半导体激光器 网状电极 高功率 近场发光均匀性 

分 类 号：TN248.4[电子电信—物理电子学]