RF MEMS电容式并联开关的研制  

Development of RF MEMS Capacitive Shunt Switches

作　　者：高杨[1] 贾小慧[2] 秦燃[2] 官承秋[2] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900 [2]西南科技大学信息工程学院,四川绵阳621010

出　　处：《半导体光电》2011年第6期785-788,共4页Semiconductor Optoelectronics

基　　金：中国工程物理研究院科技发展基金重点课题(2008A0403016;2010A0302013)

摘　　要：通过分析MEMS电容式并联开关的工作原理,设计并制作出一款适合Ka波段分布式MEMS移相器的电容式开关。通过理论计算和经验选取,初步得到了MEMS电容式并联开关的结构尺寸。采用HFSS软件建立了开关的三维电磁场模型并优化了关键结构参数。仿真表明开关在Ka波段插入损耗小于0.15dB,回波损耗大于15dB。采用CoventorWare软件进行了开关的机电耦合仿真,得出其驱动电压为2.1V。为了满足流片单位的实际工艺约束条件,对开关的设计版图和微加工工艺进行了多轮改进,研制成功MEMS电容式并联开关工艺样品。开关动态特性测试表明,在驱动电压36V时,桥下拉的高度约为2μm。Based on analyzing its operation principles, a MEMS capacitive shunt switch for Ka band distributed MEMS phase shifters is presented. The structural dimension of the MEMS switch is selected initially by theoretical calculations and experiments. The 3D electromagnetic model of the switch is established and the structural parameters are optimized by HFSS software. Simulation results show that the insertion loss of the switch is less than 0.15 dB, the isolation is higher than 15 dB in Ka band, and its driving voltage is 2.1 V obtained from the simulation of electromechanical coupling by CoventorWare software. After several modifications of the device layout and micro-machining process, preliminary switch process samples are demonstrated. Tests on the dynamic characteristics of a single MEMS switch show that the height of bridge pulling down is about 2 μm under 36 V driving voltage.

关 键 词：射频微电子机械系统 开关 工艺 驱动电压 测试 

分 类 号：TN623[电子电信—电路与系统]