考虑晶粒尺寸效应的超薄(10-50 nm)Cu电阻率模型研究  

Study of the grain size effects on electrical resistivity model for ultrathin(10-50 nm) Cu films

作　　者：王宁[1] 董刚[1] 杨银堂[1] 陈斌[1] 王凤娟[1] 张岩[1] 

机构地区：[1]西安电子科技大学微电子所,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2012年第1期365-372,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60606006);国家杰出青年基金(批准号:60725415)资助的课题~~

摘　　要：结合Marom模型与实验数据,给出了晶粒尺寸与金属薄膜厚度的关系式.基于已有的理论模型,针对厚度为10-50 nm Cu薄膜,考虑到表面散射与晶界散射以及电阻率晶粒尺寸效应,提出一种简化电阻率解析模型.结果表明,在10-20 nm薄膜厚度范围内,考虑晶粒尺寸效应后的简化模型与现有实验数据符合得更好.相对于Lim,Wang与Marom模型,所提模型的相对标准差分别降低74.24%,54.85%,78.29%.A relation between grain size and metal film is given by combining the Marom model with experiment data.Based on available theory model,taking into account the surface scattering,boundary scattering and grain size effect,an analytical resistivity model is presented for the 10-50 nm thick Cu films.In particular,within a range of 10-20 nm,the findings show that the proposed model with consideration of grain size effects is in good agreement with experimental results.Compared with Lim,Wang and Marom＇ models,the proposed method can reduce the relative standard deviations by 74.24%,54.85%and 78.29%,respectively.

关 键 词：表面散射 晶界散射 晶粒尺寸效应 平均自由程 

分 类 号：TN405[电子电信—微电子学与固体电子学]