Effect of rhenium doping on various physical properties of single crystals of MoSe_2  

作　　者：Mihir M.Vora Aditya M.Vora 

机构地区：[1]Parmeshwari 165 Vijaynagar Area,Hospital Road,Bhuj-Kutch,370001,Gujarat,India [2]Humanities and Social Science Department,S.T.B.S.College of Diploma Engineering,Shri Swami Atmanand Sarswati Vidya Sankul,Opp.Kapodra Police Station,Varachha Road,Surat 395006,Gujarat,India

出　　处：《Journal of Semiconductors》2012年第1期20-24,共5页半导体学报（英文版）

摘　　要：Effect of rhenium doping is examined in single crystals of MoSe2 viz. MoRe0.005Sel.995, MoReo.o01 Sel.999 and Moo.995Re0.005Se2, which is grown by using the direct vapor transport （DVT） technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power （TEP） measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials.Effect of rhenium doping is examined in single crystals of MoSe2 viz. MoRe0.005Sel.995, MoReo.o01 Sel.999 and Moo.995Re0.005Se2, which is grown by using the direct vapor transport （DVT） technique. The grown crystals are structurally characterized by X-ray diffraction, by determining their lattice parameters a and c, and X-ray density. Also, the Hall effect and thermoelectric power （TEP） measurements show that the single crystals exhibit a p-type semiconducting nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials.

关 键 词：structural properties electrical properties optical properties single crystals 

分 类 号：O474[理学—半导体物理]