A Ku band internally matched high power GaN HEMT amplifier with over 30%of PAE  

作　　者：Ge Qin Chen xiaojuan Luo Weijun Yuan Tingting Pu Yan Liu Xinyu 戈勤;陈晓娟;罗卫军;袁婷婷;蒲颜;刘新宇(Key Laboratory of Microwave Devices&Integrated Circuits Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]Key Laboratory of Microwave Devices&Integrated Circuits Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Journal of Semiconductors》2012年第1期52-55,共4页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)

摘　　要：We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic （3D-EM） simulator, the amplifier demonstrates a maximum output power of 42.5 dBm （17.8 W）, PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vas = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.We report a high power Ku band internally matched power amplifier （IMPA） with high power added efficiency （PAE） using 0.3 μm A1GaN/GaN high electron mobility transistors （HEMTs） on 6H-SiC substrate. The intemal matching circuit is designed to achieve high power output for the developed devices with a gate width of 4 mm. To improve the bandwidth of the amplifier, a T type pre-matching network is used at the input and output circuits, respectively. After optimization by a three-dimensional electromagnetic （3D-EM） simulator, the amplifier demonstrates a maximum output power of 42.5 dBm （17.8 W）, PAE of 30% to 36.4% and linear gain of 7 to 9.3 dB over 13.8-14.3 GHz under a 10% duty cycle pulse condition when operated at Vas = 30 V and Vgs = -4 V. At such a power level and PAE, the amplifier exhibits a power density of 4.45 W/mm.

关 键 词：KU-BAND A1GaN/GaN HEMTs IMPA output power PAE 

分 类 号：TN722.75[电子电信—电路与系统] TN245