Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403);the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014)。
This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N...