High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f_(max)=256 GHz and BV_(CEO)= 8.3 V  

作　　者：Cheng Wei Zhao Yan Gao Hanchao Chen Chen Yang Naibin 程伟;赵岩;高汉超;陈辰;杨乃彬(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute,Nanjing 210016,China)

机构地区：[1]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute,Nanjing 210016,China

出　　处：《Journal of Semiconductors》2012年第1期56-58,共3页半导体学报（英文版）

摘　　要：An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology. All processes are on 3-inch wafers. The DHBT with an emitter area of 1×15 μm2 exhibits a current cutoff frequency ft = 170 GHz and a maximum oscillation frequency fmax = 256 GHz. The breakdown voltage is 8.3 V, which is to our knowledge the highest BVcEo ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.

关 键 词：INP double heterojunction bipolar transistor PLANARIZATION 

分 类 号：TN322.8[电子电信—物理电子学]