Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery  

作　　者：Cao Lin Pu Hong-Bin Chen Zhi-Ming Zang Yuan 曹琳;蒲红斌;陈治明;臧源(Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China)

机构地区：[1]Department of Electronic Engineering,Xi'an University of Technology,Xi'an 710048,China

出　　处：《Chinese Physics B》2012年第1期449-452,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.60876050);the Research Fund for Excellent Doctor Degree Thesis of Xi'an University of Technology,China

摘　　要：In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.In this paper, a 4H-SiC semi-superjunction （S J） Schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.

关 键 词：4H-SIC semi-superjunction Schottky barrier diode softness factor 

分 类 号：TN311.7[电子电信—物理电子学] TN35