The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT  

作　　者：BI ZhiWei FENG Qian ZHANG JinCheng LU Ling MAO Wei GU WenPing MA XiaoHua HAO Yue 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi＇an 710071, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第1期40-43,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191);the Fundamental Research Funds for the Central Universities (Grant No. JY10000925002)

摘　　要：AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/crn2. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10^12 cm-2.eV-1 to 1.82×10^12 cm-2.eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the A1GaN surface by the NbA10 dielectric layer.AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with atomic layer deposited (ALD) NbAlO gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/cm2. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×1012 cm-2·eV-1 to 1.82×1012 cm-2·eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the AlGaN surface by the NbAlO dielectric layer.

关 键 词：AIGAN/GAN MIS-HEMT proton irradiation TRAP 

分 类 号：TN386[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]