云南高校图书馆联盟文献共享服务平台- AIGAN/GAN

AIGAN/GAN: 作品数：23被引量：15H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：张斌陈辰陈堂胜焦刚任春江更多>>; 相关机构：南京电子器件研究所中国科学院微电子研究所北京工业大学西安电子科技大学更多>>; 相关期刊：《Frontiers of Materials Science》《半导体技术》《Chinese Physics B》《Chinese Physics Letters》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划中国博士后科学基金国家教育部博士点基金更多>>

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator被引量：2: 《Journal of Semiconductors》2015年第9期62-65,共4页王哲力周建军孔月婵孔岑董逊杨洋陈堂胜; Project supported by the National Natural Science Foundation of China(Nos.61474101,61106130);the Natural Science Foundation of Jiangsu Province of China(No.BK20131072); A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0...; 关键词：enhancement-mode （E-mode） AIGAN/GAN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3

GaN metal-oxide-semiconductor field-effect transistors on AIGaN/GaN heterostructure with recessed gate: 《Frontiers of Materials Science》2015年第2期151-155,共5页Qingpeng WANG Jin-Ping AO Pangpang WANG Ying JIANG Liuan LI Kazuya KAWAHARADA Yang LIU; GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） on AIGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum fiel...; 关键词：gallium nitride MOSFET recess gate dry etching

Oxidation-based wet-etching method for Al Ga N/Ga N structure with different oxidation times and temperatures: 《Rare Metals》2015年第1期1-5,共5页Yang Liu Jin-Yan Wang Zhe Xu Jin-Bao Cai Mao-Jun Wang Min Yu Bing Xie Wen-Gang; financially supported by the National Natural Science Foundation of China (Nos. 60406004, 60890193, and 60736033);the National Key Micrometer/Nanometer Processing Laboratory; In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida...; 关键词：Wet-etching AIGAN/GAN Atomic forcemicroscopy Rapid thermal annealing

Intrinsic Limits of Electron Mobility in Modulation-Doped AlGaN/GaN 2D Electron Gas by Phonon Scattering: 《Journal of Electronic Science and Technology》2014年第4期415-418,共4页Liang Pang; supported in part by the Grainger Center for Electric Machinery and Electromechanics of the University of Illinois; We theoretically present the intrinsic limits to electron mobility in the modulation-doped AIGaN/GaN two-dimensional electron gas （2DEG） due to effects including acoustic deformation potential （DP） scattering, pie...; 关键词：AIGAN/GAN 2-dimensional electrongas electron mobility phonon scattering.

Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template: 《Chinese Physics B》2014年第10期383-387,共5页黄呈橙张霞许福军许正昱陈广杨志坚唐宁王新强沈波; Project supported by the National Natural Science Foundation of China(Grant Nos.11174008 and 61361166007);the National Basic Research Program of China(Grant Nos.2012CB619306 and 2012CB619301);the Research Fund for the Doctoral Program of Higher Education of China(Grant No.20100001120012); Epitaxial evolution of buried cracks in a strain-controlled AIN/GaN superlattice interlayer （IL） grown on GaN tem- plate, resulting in crack-free AIGaN/GaN multiple quantum wells （MQW）, was investigated. The proce...; 关键词：AIGAN/GAN multiple quantum wells epitaxial evolution

The Effect of Defects on the Mobility of HEMT Transistors Based on AIGaN/GaN: 《Journal of Chemistry and Chemical Engineering》2014年第3期324-326,共3页Meriem Hanzaz Said Fadlo Ahmed Nouacry Abdelkader Touhami; A phenomenological low-filed mobility model is developed to describe the dependence ot the carrier molgmty on me gate to source bias applied for AIGaN/GaN high electron mobility transistor. The results show excellent ...; 关键词：AIGAN/GAN HEMT low-filed mobility model.

Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor被引量：2: 《Chinese Physics B》2013年第11期528-531,共4页赵胜雷陈伟伟岳童王毅罗俊毛维马晓华郝跃; Project supported by the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant No.61204085); In this paper, the influence of a drain field plate （FP） on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor （HEMT） is investigated. The HEMT with only a gate FP is optimized,...; 关键词：AIGaN/GaN high electron mobility transistor forward blocking voltage drain field plate

Effects of polarization on intersubband transitions of Al_xGa_(1-x)N/GaN multi-quantum wells被引量：1: 《Chinese Physics B》2013年第5期473-479,共7页田武鄢伟一熊晖戴江南方妍妍吴志浩余晨辉陈长清; Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619302 and 2010CB923204);the National Natural Science Foundation of China (Grant Nos. 60976042, 51002058, and 11104150);the China Postdoctoral Science Foundation (Grant No. 20100480064); The effects of polarization and related structural parameters on the intersubband transitions of A1GaN/GaN multi- quantum wells （MQWs） have been investigated by solving the Schr6dinger and the Poisson equations self...; 关键词：intersubband transition POLARIZATION electron subband levels AIGaN/GaN quantum well

The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT: 《Science China(Physics,Mechanics & Astronomy)》2012年第1期40-43,共4页BI ZhiWei FENG Qian ZHANG JinCheng LU Ling MAO Wei GU WenPing MA XiaoHua HAO Yue; supported by the State Key Program and Major Program of National Natural Science Foundation of China (Grant Nos. 60736033 and 60890191);the Fundamental Research Funds for the Central Universities (Grant No. JY10000925002); AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors （MIS-HEMTs） with atomic layer deposited （ALD） NbA10 gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 ...; 关键词：AIGAN/GAN MIS-HEMT proton irradiation TRAP

Effect of Depletion Layer on the Total Mobility of AIGaN/GaN High Electron Mobility Transistors: 《材料科学与工程（中英文B版）》2011年第6期790-795,共6页Rajab Yahyazadeh Zahra Hashempour; 关键词：高电子迁移率晶体管耗尽层流动 GaN 二维电子气密度数值模型泊松方程实验数据

AIGAN/GAN