GaN metal-oxide-semiconductor field-effect transistors on AIGaN/GaN heterostructure with recessed gate  

作　　者：Qingpeng WANG Jin-Ping AO Pangpang WANG Ying JIANG Liuan LI Kazuya KAWAHARADA Yang LIU 

机构地区：[1]Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan [2]Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan [3]School of Physics and Engineering,-Sun Yat-Sen University, Guangzhou 510275, China'

出　　处：《Frontiers of Materials Science》2015年第2期151-155,共5页材料学前沿（英文版）

摘　　要：GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） on AIGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2.V-1.s-1. The effects of etching gas of CI2 and SiCI4 were investigated in the gate recess process. SiCI4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2- masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） on AIGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2.V-1.s-1. The effects of etching gas of CI2 and SiCI4 were investigated in the gate recess process. SiCI4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2- masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.

关 键 词：gallium nitride MOSFET recess gate dry etching 

分 类 号：TN304.23[电子电信—物理电子学] TP332[自动化与计算机技术—计算机系统结构]