Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator  

作　　者：王哲力 周建军 孔月婵 孔岑 董逊 杨洋 陈堂胜 

机构地区：[1]Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute

出　　处：《Journal of Semiconductors》2015年第9期62-65,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61474101,61106130);the Natural Science Foundation of Jiangsu Province of China(No.BK20131072)

摘　　要：A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0.7N） as a barrier layer and relies on silicon nitride （SIN） passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide （AL2O3） by atomic layer deposition （ALD） on A1GaN surface would not increase the 2DEG density in the heterointerface. ALD AL2O3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length （LG） of 1 μm showed a maximum drain current density （IDs） of 657 mA/mm, a maximum extrinsic transconductance （gin） of 187 mS/ram and a threshold voltage （Vth） of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of AL2O3 gate insulator. This provided an excellent way to realize E-mode A1GaN/GaN MIS-HEMTs with both high Vth and IDS.

关 键 词：enhancement-mode （E-mode） AIGAN/GAN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3 

分 类 号：TN386[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]