Effects of polarization on intersubband transitions of Al_xGa_(1-x)N/GaN multi-quantum wells  

作　　者：田武 鄢伟一 熊晖 戴江南 方妍妍 吴志浩 余晨辉 陈长清 

机构地区：[1]Wuhan National Laboratory for Optoelectronics,College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology [2]Jiangsu Key Laboratory of ASIC Design,Nantong University

出　　处：《Chinese Physics B》2013年第5期473-479,共7页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China (Grant Nos. 2012CB619302 and 2010CB923204);the National Natural Science Foundation of China (Grant Nos. 60976042, 51002058, and 11104150);the China Postdoctoral Science Foundation (Grant No. 20100480064)

摘　　要：The effects of polarization and related structural parameters on the intersubband transitions of A1GaN/GaN multi- quantum wells （MQWs） have been investigated by solving the Schr6dinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.The effects of polarization and related structural parameters on the intersubband transitions of A1GaN/GaN multi- quantum wells （MQWs） have been investigated by solving the Schr6dinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail.

关 键 词：intersubband transition POLARIZATION electron subband levels AIGaN/GaN quantum well 

分 类 号：O471.1[理学—半导体物理]