The Effect of Defects on the Mobility of HEMT Transistors Based on AIGaN/GaN  

作　　者：Meriem Hanzaz Said Fadlo Ahmed Nouacry Abdelkader Touhami 

机构地区：[1]Laboratory of Materials Physics, Microelectronics, Automatic and Thermic, Faculty of Sciences Ain Chock Km8, University Hassan11, Casablanca 5366. Morocco

出　　处：《Journal of Chemistry and Chemical Engineering》2014年第3期324-326,共3页化学与化工（英文版）

摘　　要：A phenomenological low-filed mobility model is developed to describe the dependence ot the carrier molgmty on me gate to source bias applied for AIGaN/GaN high electron mobility transistor. The results show excellent agreement with experimental data, when compared thereby proving the validity of the model. In the proposed work the temporal evolution of the mobility degradation shows a sharp decline in emission rates below 456 s-1. We also note a sharp decline for large defects densities.

关 键 词：AIGAN/GAN HEMT low-filed mobility model. 

分 类 号：TN32[电子电信—物理电子学] TN304.23