Oxidation-based wet-etching method for Al Ga N/Ga N structure with different oxidation times and temperatures  

作　　者：Yang Liu Jin-Yan Wang Zhe Xu Jin-Bao Cai Mao-Jun Wang Min Yu Bing Xie Wen-Gang 

机构地区：[1]Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University

出　　处：《Rare Metals》2015年第1期1-5,共5页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (Nos. 60406004, 60890193, and 60736033);the National Key Micrometer/Nanometer Processing Laboratory

摘　　要：In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.In this article, a detailed analysis of the wet- etching technique for AIGaN/GaN heterostructure using dry thermal oxidation followed by a wet alkali etching was performed. The experimental results show that the oxida- tion plays a key role in the wet-etching method and the etching depth is mainly determined by the oxidation tem- perature and time. The correlation of etching roughness with oxidation time and temperature was investigated. It is found that there exists a critical oxidation temperature in the oxidation process. Finally, a physical explanation of the oxidation procedure for A1GaN layer was given.

关 键 词：Wet-etching AIGAN/GAN Atomic forcemicroscopy Rapid thermal annealing 

分 类 号：TN305.7[电子电信—物理电子学]