氧化铋薄膜的制备及光催化性能研究  

Synthesis and photocatalytic properties of bismuth oxide film

作　　者：王留刚[1] 张俊英[1] 李春芝[1] 杨靖安[1] 

机构地区：[1]北京航空航天大学物理科学与核能工程学院材料物理与化学研究中心,北京100191

出　　处：《功能材料》2011年第2期355-358,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2009AA03Z428)

摘　　要：采用磁控溅射制备了氧化铋薄膜,研究了制备工艺对薄膜的结构、微观形貌和光学性能的影响,并对样品进行了光催化性能评价。结果表明,氧氩比和退火温度显著影响薄膜的性能。当氧氩比为20:80时获得的薄膜具有最佳光催化性能;随退火温度升高,薄膜结晶性增强,并逐渐出现Bi和Si的氧化物,经500℃退火的薄膜具有最强的光催化活性。Bismuth oxide films were prepared by DC reactive sputtering.We studied the structure and optical properties of the films and evaluated their photocatalytic activities.The results showed that the ratio of O2 to Ar and annealing treatment could affect the properties of the films.20：80 was the best ratio of O2 to Ar.The crystallization was enhanced with the increase of annealing temperature.The optimum photocatalytic performance was obtained when the films were annealed at 500℃.

关 键 词：氧化铋 磁控溅射 氧氩比 热处理 光催化 

分 类 号：O612.5[理学—无机化学] O484[理学—化学]