Direct growth of single-walled carbon nanotubes on substrates  

作　　者：PENG Fei LIU Yu CUI RongLi GAO DongLiang YANG Feng LI Yan 

机构地区：[1]Beijing National Laboratory for Molecular Sciences,National Laboratory of Rare Earth Material Chemistry and Application,Key Laboratory forthe Physics and Chemistry of Nanodevices,College of Chemistry and Molecular Engineering,Peking University,Beijing 100871,China

出　　处：《Chinese Science Bulletin》2012年第2期225-233,共9页

基　　金：supported by the National Basic Research Program of Chi-na (2011CB933003);the National Natural Science Foundation of China (11179011 and 21125103)

摘　　要：As one of the most promising candidate material for next generation electronic devices,the reliable and controllable synthesis of high quality single-walled carbon nanotubes(SWNTs) has long been an essential and important issue in the field.Direct growth of SWNTs on flat substrates by chemical vapor deposition(CVD) process is the best way to obtain SWNTs because it is immediately ready for building nano-devices.The orientation of the SWNTs has been well controlled by gas flow or substrate lattice during the CVD growth process.The chirality and structure control of SWNTs is still a big challenge.However,the conductivity selective growth has already partially succeeded.New catalysts have been explored to obtain SWNTs of higher quality.Along with the further progress in the study of the SWNT growth,the precise control over the orientation,position and conductivity of SWNTs is expected to meet the requirements of carbon-based nanoelectronics.As one of the most promising candidate material for next generation electronic devices, the reliable and controllable synthesis of high quality single-walled carbon nanotubes （SWNTs） has long been an essential and important issue in the field. Direct growth of SWNTs on flat substrates by chemical vapor deposition （CVD） process is the best way to obtain SWNTs because it is immediately ready for building nano-devices. The orientation of the SWNTs has been well controlled by gas flow or substrate lattice during the CVD growth process. The chirality and structure control of SWNTs is still a big challenge. However, the conductivity selective growth has already partially succeeded. New catalysts have been explored to obtain SWNTs of higher quality. Along with the further progress in the study of the SWNT growth, the precise control over the orientation, position and conductivity of SWNTs is expected to meet the requirements of carbon-based nanoelectronics.

关 键 词：单壁碳纳米管 直接生长 衬底 化学气相沉积 结构控制 SWNTS 纳米电子学 电子设备 

分 类 号：O484.1[理学—固体物理] TB383[理学—物理]