晶格错配与应变弛豫及异质外延生长模式  

Lattice mismatch and elastic relaxation and heteroepitaxial growth mode

作　　者：王辉[1] 周旺民[1] 江瑛[1] 

机构地区：[1]浙江工业大学机械工程学院,浙江杭州310032

出　　处：《浙江工业大学学报》2012年第1期80-83,共4页Journal of Zhejiang University of Technology

基　　金：浙江省自然科学基金资助项目(Y6100440)

摘　　要：应变弛豫是自组织量子点生长的驱动力,异质外延生长模式及其转变与体系表面能、界面能和应变能有直接关系.基于异质外延生长系统的热力学能量学,研究了晶格错配、应变弛豫与表面能对立方晶体异质外延生长模式的影响,给出了生长模式转变的临界成核体积、成核功与生长模式相图等,结果可作为异质外延生长量子点等实验的理论参考.The elastic relaxation is a driving force of the growth of self-organized quantum dot,while heteroepitaxial growth mode and transition are directly related to the surface energy,inteface energy and strain energy.After the effects of lattice mismatch,elastic relaxation and surfane energy on heteroepitaxial growth mode of cubic crystal are investigated based on energetics,the critical nucleation volume,nucleation work and phase diagram of growth mode are presented,which can serve as a theoretical basis for interpretation of experiments of preparation quantum dots by heteroepitaxial growth.

关 键 词：晶格错配 应变弛豫 生长模式 量子点 

分 类 号：O484.2[理学—固体物理]