电子电镀添加剂的分子设计  

Molecular-scale design of additives used for electronic plating

作　　者：贺岩峰[1] 张莹莹[1] 高学朋[1] 陈春 孙红旗 

机构地区：[1]长春工业大学化工学院,吉林长春130012 [2]上海新阳半导体材料股份有限公司,上海201616

出　　处：《电镀与涂饰》2012年第2期1-5,共5页Electroplating & Finishing

摘　　要：提出了电镀添加剂设计的概念,给出了锡基电子电镀添加剂设计的基本方法。由于电镀添加剂作用的复杂性,要得到性能优异的添加剂,必须从分子水平上对添加剂进行设计,而添加剂在镀层中的夹杂是通过化学夹杂和物理夹杂引起,从分子水平上设计的低吸附型镀锡添加剂可以减少有机分子的夹杂。The idea about the design of electroplating additives was suggested, and the basic technique of design for the additives used for tin-substrate electronic plating was presented. Due to the complicated interaction between additive molecules, molecular-scale design is necessary to obtain the additives with desired performance. The incorporation of additive into deposit occurs either chemically or physically during deposition. The tin plating additives with low adsorption, which is designed at molecular level, is conducive to reduce the incorporation of organic molecules in deposit.

关 键 词：电子电镀 镀锡 添加剂 分子设计 

分 类 号：TQ153.13[化学工程—电化学工业]