单偏置电压多位分布式MEMS传输线移相器  

Multi-Bit DMTL Phase Shifters with the Single Bias Voltage

作　　者：邓成[1] 鲍景富[1] 杜亦佳[1] 凌源[1] 赵兴海[2] 郑英彬[2] 

机构地区：[1]电子科技大学电子工程学院,成都611731 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《微纳电子技术》2012年第2期102-107,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金委员会和中国工程物理研究院联合基金资助项目(11176006);国家部委基金项目(9140A23070311DZ0210);中国工程物理研究院科学技术发展基金资助项目(2008A0403016)

摘　　要：针对传统多位分布式MEMS传输线(DMTL)移相器需要多个偏置电压控制的问题,提出了一种单电压控制多位DMTL移相器的设计方案。这种移相器的每一位具有不同的弹性系数,因此它们的下拉电压各不相同。给出了这种移相器的相关理论、设计实例及仿真结果。通过仿真结果可知,单偏置电压3位DMTL移相器低位到高位的下拉电压分别为19.73,40.49和74.89 V,低位发生下拉时高位相移偏移小于0.062%(10 GHz,2.925×10-4 rad)。单偏置电压4位DMTL移相器低位到高位的下拉电压分别为19.73,32.55,48.41和74.89 V,低位发生下拉时高位相移偏移小于0.094%(10 GHz,4.425×10-4 rad)。The multi-bit distributed MEMS transmission line（DMTL） phase shifter with the single bias voltage was proposed to reduce the number of bias for the requirement of the traditional multi-bit DMTL phase shifter.Each bit of the DMTL phase shifter has a beam with different spring constants,thus the pull-in voltages of which are different.The related theory,designed example and simulation result based on the phase shifter were given.The result shows that the pull-in voltages of 3-bit DMTL phase shifter with single bias are 19.73,40.49 and 74.89 V,respectively.The phase shift offset of the high bit is lower than 0.062%（10 GHz,2.925×10-4 rad）,when the low bit is pulled in.The pull-in voltages of 4-bit DMTL phase shifter with single bias are 19.73,32.55,48.41 and 74.89 V,respectively.The phase shift offset of the high bit is lower than 0.094%（10 GHz,4.425×10-4 rad）,when the low bit is pulled in.

关 键 词：射频微机电系统(RFMEMS) 分布式MEMS传输线移相器 下拉电压 单偏置电压 相移偏移 

分 类 号：TH703[机械工程—仪器科学与技术] TN623[机械工程—精密仪器及机械]