基于N-on-P结构的背照射延伸波长640×1线列InGaAs探测器  

Extended-wavelength 640×1 linear InGaAs detector arrays using N-on-P configuration for back illumination

作　　者：朱耀明[1,2,3] 李永富[1,2,3] 李雪[1,2] 唐恒敬[1,2] 邵秀梅[1,2] 陈郁[1,2] 邓洪海[1,2,3] 魏鹏[1,2,3] 张永刚[4] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院红外成像材料与器件重点实验室,上海200083 [3]中国科学院研究生院,北京100039 [4]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《红外与毫米波学报》2012年第1期11-14,90,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金重点项目(50632060);中国科学院知识创新工程青年人才领域前沿前瞻项目资助(Q-ZY-9、C2-32)~~

摘　　要：在N-on-P型In0.78Al0.22As/In0.78Ga0.22As外延材料上,采用感应耦合等离子体(ICP)刻蚀技术制备了背照射640×1线列InGaAs探测器芯片,研究了探测器光电性能.结果表明,室温下单元器件响应截止波长和峰值波长分别为2.36μm和1.92μm,平均优值因子(R0A)为16.0Ω.cm2,峰值量子效率达到了37.5%;在1 ms积分时间下焦平面探测器平均峰值探测率达到了2.01×1011 cmHz1/2/W,响应非均匀性为8.77%,盲元率约为0.6%.Back-illuminated 640×1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22As material of N-on-P configuration by the inductively coupled plasma（ICP） etching.The photoelectric characteristics of the detector were investigated.The results indicated that the cutoff-wavelength and peak-wavelength are 2.36 μm and 1.92 μm,respectively,at room temperature.The average value of R0A is 16.0 Ω·cm2 and the quantum efficiency of the peak wavelength reaches to 37.5%.Otherwise,the average peak detectivity of linear detector array reaches to 2.01×1011 cmHz1/2/W,the response nonuniformity is about 8.77% and the defective pixel ratio is 0.6% for 1 ms of integrate time.

关 键 词：ICP刻蚀 N-on-P结构 线列探测器 光电性能 

分 类 号：TN21[电子电信—物理电子学]