基于Multisim的场效应管放大电路分析与设计  

Analysis and Design of Amplifier of Field Effect Transistor Based on Multisim

作　　者：陈莉平[1] 任艳频[1] 侯素芳[1] 

机构地区：[1]清华大学自动化系,北京100084

出　　处：《实验室研究与探索》2011年第12期130-133,共4页Research and Exploration In Laboratory

摘　　要：配合理论课程在实验课程中增加场效应管及其放大电路的内容。以N沟道结型场效应管2N5486为例,介绍运用EDA软件Multisim对场效应管特性曲线及由其构成的共漏放大电路的设计与仿真分析方法。Following the introduction of Field Effect Transistor（FET） in theoretical course,experiments of FET and FET-based amplifier have been added to relevant pratical course.Taking the N-channel junction FET 2N5486 for an instance,a method of design and simulation for FET characteristic curve and common-drain amplifier is introduced in this paper.All the work is based on Mutltisim,one of the EDA tools.

关 键 词：场效应管 放大电路 MULTISIM 

分 类 号：TN702[电子电信—电路与系统]