离子源对磁控溅射制备TiNC膜基结合力的影响  

Influence of ion source on the film adhesion of TiNC prepared by magnetron sputtering

作　　者：钱锋 林晶[1,2] 刘树红 

机构地区：[1]深圳市天星达真空镀膜设备有限公司,广东深圳518172 [2]哈尔滨商业大学,黑龙江哈尔滨150028

出　　处：《真空》2012年第1期78-82,共5页Vacuum

摘　　要：由于膜基附着力不好,膜层脱落问题是工业生产中磁控溅射镀制黑膜最常见的问题。本实验采用阳极线性离子源和霍尔点源辅助磁控溅射复合技术制备了TiNC薄膜,探讨解决TiNC膜基附着力不好的问题。初步实验结果表明,离子束辅助沉积对于改善膜基附着力的作用并不明显,本文还比较了脉冲偏压清洗对膜基附着力的影响,探讨了其可能影响因素。Poor film adhesion is one of the most common problems in film deposition by magnetron sputtering, especially for black decoration coating. In this paper, TiNC films were prepared by magnetron sputtering assisted by ion sources to improve the film adhesion. However, the experiment shows that the influence of ion sources on the improvement of film adhesion is not obvious： Moreover, the effect of pulse bias cleaning on the film adhesion and the reason is discussed in details.

关 键 词：阳极层离子源 膜基附着力 TiNC 中频磁控溅射 

分 类 号：TG174[金属学及工艺—金属表面处理] TB43[金属学及工艺—金属学]