ITO:Mo透明导电薄膜的制备  

Preparation of Transparent Conducting Mo-Doped ITO Film

作　　者：张春伟[1] 王书昶[1] 刘振华[1] 刘拥军[1] 何军辉[1] 

机构地区：[1]扬州大学物理科学与技术学院,江苏扬州225002

出　　处：《微电子学》2012年第1期111-114,共4页Microelectronics

基　　金：江苏省科技厅工业支撑项目资助(BE2009106)

摘　　要：利用通过固相烧结法得到的自制靶材,采用脉冲激光沉积法(PLD)在不同的衬底温度下沉积得到薄膜。通过XRD对它们的晶体结构进行分析,对薄膜断面进行扫描,测量其薄膜厚度。利用四探针法和霍尔效率测试仪,分别对薄膜的电阻率和载流子浓度及迁移率进行测量和分析。最后,用分光光度计对薄膜的透光率进行测量和分析,并计算了薄膜的禁带宽度。结果表明,在500℃下沉积的薄膜综合性能最好,电阻率可达2.611×10-4Ω.cm,透光率在90%以上,禁带宽度为4.29eV。With self-made target material prepared by solid phase sintering,thin films were deposited using pulse-laser deposition（PLD） under different substrate temperatures.Analysis was made on crystal structure of the film with XRD,and film thickness was measured with SEM.The resistivity and transport ratio of the film were measured using four-probe method,and the carrier concentration and mobility were analyzed with Hall efficiency tester.Finally,transmittance of the film was measured with spectrophotometer,and energy gap of the film was calculated.Results indicated that film deposited at 500 ℃ had the best property.The resistivity of the film was up to 2.611×10-4 Ω·cm,and its transmittance was above 90%,and the energy gap was 4.29 eV.

关 键 词：ITO∶Mo 透明导电薄膜 PLD TCO 

分 类 号：TN304.8[电子电信—物理电子学]