金属平面半导体量子阱微腔自发发射  

Spontaneous Emission in Quantum Well Planar Micro\|Cavities with Metallic Mirrors *

作　　者：赵红东[1] 张存善[2] 周革[1] 沈光地[3] 张以谟[1] 

机构地区：[1]天津大学精密仪器与光电子工程学院教育部光电信息技术科学开发实验室,天津300072 [2]河北工业大学文理学院,天津300130 [3]北京工业大学电子工程学系北京市光电子技术室,北京100022

出　　处：《Journal of Semiconductors》2000年第1期33-37,共5页半导体学报（英文版）

基　　金：北京市自然科学基金和国家"863"高技术计划资助项目

摘　　要：应用微腔腔量子电动力学和半导体量子阱物理，讨论了平面半导体量子阱微腔的自发发射，得到了腔结构、量子阱参量和注入载流子下的微腔自发发射谱和载流子寿命．计算发现由于微腔和量子阱分别对光子和载流子的限制，平面微腔可以增进自发发射，具有很强单方向性．Based on cavity quantum electrodynamics and physics of semiconductor quantum well, the spontaneous emission and spontaneous emission lifetime of the carrier in quantum well planar micro-cavities with metallic mirrors have been discussed. The spontaneous emission spectra are obtained for different mirror reflectivity and different cavity length, when the injection carrier density is fixed. As a result, spontaneous emission intensity,especially in one direction, can be enhanced for the confinements of the photons and the carries by the cavity and the quantum well, respectively.

关 键 词：微腔 自发发射 量子阱 金属平面半导体 

分 类 号：O471[理学—半导体物理]