纳米级富氮SiO_xN_y薄膜的电子注入损伤研究  

Electron Injection Damnification Study of Nitrogen Rich SiO xN y Thin Film at Nanometer

作　　者：张昊[1] 陈蒲生[1] 田小峰[1] 冯文修[1] 刘小阳[2] 

机构地区：[1]华南理工大学应用物理系,广州510641 [2]华南理工大学分析测试中心,广州510641

出　　处：《半导体技术》2000年第1期42-45,共4页Semiconductor Technology

摘　　要：研究了在30V的直流偏压下,对PECVD工艺制备的SiOxNy薄膜进行电子注入,并结合俄歇谱和红外光谱对实验结果进行了讨论。结果表明,薄膜内有较多的受主陷阱,平带电压漂移在小电流下有显著变化;该方法对薄膜界面造成的损伤较小。In this paper,we study that electron is injected into SiO x N y thin film prepared with PECVD process under the condition of 30V direct voltage,at the same time we discuss the experimental results combining AES spectrum and infrared absorption spectrum.The results show there are some acceptor traps in this thin film,the flat band shift changes obviously in little current;the damnification of interface caused by the electron injected is very small,and the variation of the interface density in forbidden band is not obvious.

关 键 词：介质膜 电子注入 纳米级 VLSI 

分 类 号：TN304.055[电子电信—物理电子学]