Cr/蓝宝石界面的二次离子质谱研究  

SIMS Analysis of the Cr/Sapphire Interface

作　　者：岳瑞峰[1] 王佑祥[2] 陈春华[2] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]中国科学院表面物理国家重点实验室,北京100864

出　　处：《半导体技术》2000年第1期33-35,41,共4页Semiconductor Technology

基　　金：国家自然科学基金

摘　　要：采用电子束蒸发的方法在200℃抛光的(1102)取向的蓝宝石(︿-Al2O3单晶)衬底上淀积200nm的Cr膜,并在高真空中退火。利用MCs+-SIMS技术(在Cs+一次离子轰击下检测MCs+型二次离子)对样品进行了深度剖析,给出了界面组分分布随退火温度与时间的变化关系,并在850℃退火样品中观测到一种新的界面结构。结果表明。A 200nm Cr film was deposited on a polished(1102)oriented sapphire substrate at 200℃ by electron beam evaporation.Depth profiling was conducted using MCs + SIMS technique(detection of MCs + secondary ion under Cs + primary ion bombardment)after the samples were annealed in high vacuum.The variation of interface composition with annealing temperature and time was given,and a new structure was observed in Cr/sapphire interface after the sapmle was annealed at 850℃.The results show that MCs + SIMS technique is an effective method to analyze the interfacial diffusion and reaction between metal and ceramics.

关 键 词：CR 蓝宝石 离子质谱 陶瓷半导体 

分 类 号：TN304.82[电子电信—物理电子学]