光电双基区晶体管中的光控电流开关效应  

The Photo controlled Current Switching in Photo Dual Base Transistor

作　　者：郭维廉[1] 张培宁[1] 郑云光[1] 李树荣[1] 张世林[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《半导体技术》2000年第1期19-21,30,共4页Semiconductor Technology

基　　金：集成光电子学联合实验室开放课题资助

摘　　要：光电双基区晶体管在光电混合模式工作条件下具有光控“S”型负阻特性及其光控电流开关效应。测量了光照时IBE-VBE特性、Ith(光阈值)-RC特性等曲线。并利用电注入双基区晶体管的“S”型负阻产生机理解释了测得的结果。In this paper,the photo controlled“S”negative resistance characteristics and the current switching effect have been found in the optical and electrical mixed operating mode on photo dual base transistor(PDUBAT).The I BE V BE and I th R C characteristics of PDUBAT under light have been measured.The measured results can be explained by the“S”negative resistance characteristic on electrical DUBAT device.

关 键 词：光电负阻器件 光控电流开关 光电晶体管 

分 类 号：TN364.3[电子电信—物理电子学]