脉冲偏压作用下MgO薄膜表面的荷电效应  

Reduction of Accumulated Charges on MgO Films by Adjusting Pulsed Bias

作　　者：朱道云[1,2] 郑昌喜[2] 王明东[2] 陈弟虎[2] 何振辉[2] 闻立时[2] 

机构地区：[1]广东工业大学实验教学部,广州510006 [2]中山大学物理科学与工程技术学院光电材料与技术国家重点实验室,广州510275

出　　处：《真空科学与技术学报》2012年第1期48-52,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2003AA311122)

摘　　要：采用脉冲偏压电弧离子沉积技术在玻璃基片上制备了透明的、具有择优取向的MgO薄膜。针对绝缘性薄膜表面的荷电效应,比较了脉冲偏压作用下鞘层对离子的加速时间（即鞘层的寿命）与脉冲宽度的大小以及偏压鞘层的初始厚度与离子穿越的距离的大小,讨论了不同占空比下偏压鞘层对离子的加速效应。利用X射线衍射及扫描电子显微镜对样品的观察结果表明,由于荷电效应,脉冲偏压幅值为-150 V,占空比在10%~40%的范围内,占空比的变化并不能改变MgO薄膜的微观结构和表面形貌。The highly transparent MgO films were grown by cathodic vacuum arc ion deposition on the pulse-biased substrates of slide-glass.The microstructures of the MgO films were characterized with X-ray diffraction and scanning electron microscopy.The impacts of the pulsed bias on the surface charge accumulation of the insulting MgO films,and on the plasma sheath acceleration time were evaluated.The results show that the preferentially oriented MgO films were grown,and that the charge accumulation was reduced by optimizing the pulsed bias.The variations in duty cycle little affects the microstructures of the MgO films.Pulsed bias was-150 V with a duty cycle ranging from 10% to 40%.

关 键 词：脉冲偏压 电弧离子 荷电效应 MgO薄膜 

分 类 号：TB43[一般工业技术]