The temperature dependence of optical properties of InGaN alloys  

作　　者：ZHAO ChuanZhen ZHANG Rong LIU Bin FU DeYi CHEN Hui LI Ming XIE ZiLi XIU XiangQian GU ShuLin ZHENG YouDou 

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing National Laboratory of Microstructures,Nanjing University,Nanjing 210093,China [2]School of Information and Communication Engineering,Tianjin Polytechnics University,Tianjin 300160,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第3期396-399,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Special Funds for Major State Basic Research Project (Grant No. 2011CB301901);the National Natural Science Foundation of China (Grant Nos. 60820106003,60990311 and 60906025);the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008019 and BK2009255);the Research Funds from NJU-Yangzhou Institute of Opto-electronics

摘　　要：In our experiments,the PL spectra of several In x Ga 1 x N alloy samples with In contents x=0.1,0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K.S-shaped temperature dependencies were observed in all InGaN samples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region.It was found that both phenomena are relative to localization effects.In addition,the degree of localization effects in three samples was investigated using the band-tail model.Our findings are presented in this paper.In our experiments, the PL spectra of several InxGa1-xN alloy samples with In contents x=0.1, 0.15 and 0.25 were measured as a function of temperature ranging from 10 K to 300 K. S-shaped temperature dependencies were observed in all InGaN sam- ples and a sharp decrease in the full width at half maximum occurred with decreasing temperature in the moderate temperature region. It was found that both phenomena are relative to localization effects. In addition, the degree of localization effects in three samples was investigated using the band-tail model. Our findings are presented in this paper.

关 键 词：INGAN PHOTOLUMINESCENCE full width at half maximum 

分 类 号：TN304.21[电子电信—物理电子学] TN312.8