Replication of large area nanoimprint stamp with small critical dimension loss  

作　　者：MENG FanTao GUAN Le WANG ZhiWen HAN ZhiTao CHU JinKui 

机构地区：[1]Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116024,China [2]Key Laboratory for Micro/Nano Technology and System of Liaoning Province,Dalian University of Technology,Dalian 116024,China

出　　处：《Science China(Technological Sciences)》2012年第3期600-605,共6页中国科学（技术科学英文版）

基　　金：supported by the National Basic Research Program of China ("973" Program) (Grant No. 2011CB302105);the Fundamental Research Funds for the Central Universities (Grant No. DUT10ZD104)

摘　　要：In this paper,the replication process of large area nanoimprint stamp with small critical dimension(CD) loss was investigated,using the thin residual layer nanoimprint lithography(NIL) technology.The residual layer thickness was optimized by changing the spin-coated resist thickness.The dependences of the residual layer etching rate on gas flow,chamber pressure,and RF power were investigated,and the optimized process conditions were established.By means of the thin residual layer NIL technique and optimized residual layer etching process,large area stamp with small CD loss and multi-orientation patterns was successfully replicated on 2-inch SiO2/Si wafer.The CD loss was controlled within 5 nm.The replicated stamp showed high performance in the patterning with thermal NIL.The replication process reported in this work could also be used to fabricate large area nanostructures with small CD loss.

关 键 词：nanoimprint stamp REPLICATION small critical dimension loss nanoimprint lithography multi-orientation patterns 

分 类 号：TN305.93[电子电信—物理电子学] X928.03[环境科学与工程—安全科学]