微晶硅薄膜的光稳定性与微结构的关系  

RELATION OF LIGHT STABILITY AND MICROSTRUCTURE OF MICROCRYSTALLINE SILICON THIN FILM

作　　者：徐艳华[1] 陈永生[1] 卢景霄[1] 王志永[1] 王蕾[1] 高海波[1] 张旭营[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450002

出　　处：《太阳能学报》2012年第2期273-276,共4页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展(973)计划(2006CB202601)

摘　　要：利用甚高频等离子体增强化学气相沉积技术,通过改变功率密度和沉积压强制备了三系列微晶硅薄膜。采用拉曼光谱、XRD与电导率分析技术,研究在光照条件下微晶硅薄膜的光学特性,光电导衰退与晶化率、沉积速率、晶粒尺寸间的关系。研究发现:随着晶化率的增加,微晶硅薄膜的光电导衰退率逐渐减小;随着沉积气压的增加,相同晶化率的薄膜的光稳定性降低。在光照50h后,薄膜的光电导衰退基本达到饱和。Three series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition at different power densities and deposition pressure. The optics characteristics of microcrystalline silicon thin film, and the relation of photoconduetivity degradation with crystallinity, deposition rate, grain size under light soaking were analyzed by Roman spectroscopy, X-ray diffraction and photoconductivity analysis technology. It is found that degradation of photoconductivity decreases as crystalline volume fraction increases ; the stability of thin film with similar value of crystallinity decreases as deposition pressure increases. The photoconduetivity does not change after simulating illumination for 50 hours.

关 键 词：微晶硅薄膜 光电导衰退 模拟光照 光稳定性 

分 类 号：TK304[动力工程及工程热物理—热能工程]