晶体生长速度对硅单晶微缺陷影响的数值模拟  

Numerical Simulation of Crystal Growth Velocity on Micro-Defects in CZ-Si

作　　者：常麟 崔彬 周旗钢[1,2] 戴小林 吴志强 肖清华 

机构地区：[1]北京有研半导体材料股份有限公司,北京100088 [2]北京有色金属研究总院,北京100088

出　　处：《半导体技术》2012年第3期206-211,共6页Semiconductor Technology

基　　金：国家科技重大专项项目(2008ZX02401);国际科技合作项目(2007DFC50310)

摘　　要：利用有限元分析软件对为300 mm直拉硅单晶生长过程进行模拟,分析了硅单晶体中微缺陷的类型和分布随不同晶体生长速度的变化规律。随着晶体生长速度的不断增大,硅单晶体中以空位为主的微缺陷区域逐渐增大,如水晶起源粒子(crystal originated particles,COP),以间隙原子为主的微缺陷区域逐渐减小,同时,间隙型微缺陷的浓度呈现不断减小的趋势,空位型微缺陷的浓度呈现不断增大的趋势。晶体生长速度的不断增大,硅单晶体中间隙型微缺陷的浓度与空位型微缺陷的浓度近似相等的区域先增大,后减小。通过Cu缀饰实验和流体图案缺陷(flow pattern defect,FPD)密度测量,将所得微缺陷类型、浓度的实验结果与晶体生长速度对硅晶体微缺陷影响的数值模拟结果进行了对比,实验结果验证了数值模拟的结果。The finite element analysis software crystal growth velocity on micro-defect in CZ-Si. Femag-CZ was used for the simulation of the effect The software shows with the crystal growth rate increasing, the micro-defects region based on vacancy increases, such as COP （crystal originated particles）, but the micro-defects region based on interstitial atoms decreases. Simultaneously, the concentration of micro-defects based on interstitial atoms shows decreasing trend, the concentration of micro-defects based on vacancy shows increasing trend. Increasing the speed of crystal growth, the region that interstitial atoms concentration approximately equal to vacancy concentration in silicon crystal firstly increase, and then decrease. In order to prove the results of numerical analysis, the copper decoration experiment was taken and the density of FPD （flow pattern defect） in silicon wafer was measured. Compared the numerical analysis with experiment, the two results give the same variation trend.

关 键 词：直拉硅单晶 晶体生长速度 微缺陷 有限元分析 数值模拟 

分 类 号：TN304.1[电子电信—物理电子学]