C离子注入对SiO_2薄膜光致发光特性的影响  

Photoluminescence effects of SiO_2 films after C-ion implantation

作　　者：刘纯宝[1,2] 王志光[2] 

机构地区：[1]菏泽学院物理系,山东菏泽274015 [2]中国科学院近代物理研究所,甘肃兰州730000

出　　处：《功能材料》2012年第5期579-581,586,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(10475102);菏泽学院科研基金资助项目(XY09WL02);菏泽学院博士基金资助项目(XY10BS02)

摘　　要：先用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用不同能量的C离子对薄膜进行注入,然后用荧光光谱分析了注入参数(注入能量、剂量)与发光特性改变的关联。研究发现,C离子注入能显著影响薄膜的发光特性,并且薄膜发光特性的改变强烈依赖于C离子的注入能量和注入剂量。对C离子注入SiO2薄膜引起发光特性改变的可能机理进行了简单讨论。Amorphous SiO2 thin films of about 0.5-1μm in thickness were thermally grown on single crystalline silicon. These samples were implanted at room temperature （RT） with C ions of 60,80,100 or 120keV to doses ranging from 1.0 ×10^17 to 1.2 × 10^18 ions/cm2. The variation of photoluminescence （PL） properties of these samples was investigated at RT using a fluorescent spectroscopy. The obtained results showed that C-ion im- plantation led to significant changes of the PL properties and the variation of the PL properties depend strongly on the energy and doses of the C-ion implantations. For examples, huge PL peaks located at about 2.63, 2.99 and 3.39eV can be seen in PL spectra of sample with 120keV C ions implanted to 1.0× 10^17ions/cm2. This may imply that some micro-structures like Si-Si defects were induced in a-SiO2 films after C-ion implantations. It seems that special light emitters can be produced by using proper ion energy and implantation doses, which is a very useful way for synthesis of new type of SiO2-based light-emission materials.

关 键 词：光致发光谱 离子注入 缺陷 

分 类 号：O482.31[理学—固体物理] O571.33[理学—物理]