透明导电InSnGaMo氧化物薄膜光电性能研究  

Growth and Characterization of Transparent Conducting InSnGaMo Oxides Films

作　　者：刘振华[1] 刘宝琴[1] 张春伟[1] 王书昶[1] 刘拥军[1] 何军辉[1] 

机构地区：[1]扬州大学物理科学与技术学院,扬州225002

出　　处：《真空科学与技术学报》2012年第2期109-113,共5页Chinese Journal of Vacuum Science and Technology

基　　金：江苏省科技支撑计划项目(No.BE2009106)

摘　　要：利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。The highly transparent conducting InSn oxides films,co-doped with Ga and Mo oxides,were grown by pulsed laser deposition on quartz substrate.The impacts of the growth conditions on the quality of the composite InSnGaMo oxides films were studied.The microstructures and electrical properties were characterized with X-ray diffraction,scanning electron microscopy,and Hall-effect measurement.The results show that the substrate temperature significantly affects the microstructure and electrical properties of the films.For example,as the temperature rises up,the grains grow fast,the resistivity rapidly drops down,and the optical transmittance markedly increases.Deposited at 450℃,the film has the lowest resistivity of 4.15×10-4 Ω·cm,the highest carrier concentration of 1020 cm-3,the largest mobility of 45 cm2V-1s-1,and an averaged transmittance above 92%,in the visible range,or the highest one of 99% at a wavelength of 362 nm.

关 键 词：InSnGaMo复合氧化物薄膜 透明导电薄膜 脉冲激光沉积 光电性能 

分 类 号：O484.4[理学—固体物理]