一维氮化铝纳米线的特性及生长机理研究  

Research on Properties and Growth Mechanism of One-dimensional AIN Nanowires

作　　者：程赛[1] 吕惠民[1] 崔静雅[1] 

机构地区：[1]西安理工大学应用物理系,陕西西安710054

出　　处：《纳米科技》2011年第5期32-38,共7页

摘　　要：以三氯化铝和叠氮化钠为原料，利用复分解反应法在温度为650℃条件下反应3h，成功地制备出呈灰白色粉末的一维单晶氮化铝纳米材料，通过对样品进行XRD、TEM和SAED测试，结果表明，样品为表面光滑的长直形圆柱状六方结构的氮化铝，直径为50nm左右，长度在几个微米以上，晶格常数分别为a=0．268nm，c=0．498nm；AlN紫外吸收谱的研究表明，AlN样品在202nm处具有一个尖锐吸收峰，其对应禁带宽度值约为6．14eV，并采用气-固（VS）生长机理、择优取向原理对一维单晶纳米线的生长进行了解释。Using AICl3 and NaN3 as raw materials, one-dimensional monocrystal AIN nanomaterials of grayish white powder were prepared successfully by double decomposition reaction at 650℃ for 3h. A1N nanomaterials were characterized by X-Ray Diffraction （XRD）, Transmission Electron Microscope （TEM） and Selected Area Electron Diffraction（SAED）. The results indicate that the samples are hexagonal A1N with the lattice constants a=0.268nm and c=0.498nm, and the nanowires have long straightwire morphology with a diameter about 50 nm and the length of several micrometers. The Ultraviolet absorption spectrum（UV） of the A1N samples was also carried out, and the results showed a sharp absorption peaks at 202nm, which corresponding band-gap value is 6.14eV. At the same time, we explained each peak formed in the photoluminescence of samples. Vapor-solid （VS） growth mechanism and preferred orientation principle have been performed to interpret the growth mechanisms of one-dimensional nanowires.

关 键 词：一维氮化铝纳米线 特性表征 生长机理 择优取向 

分 类 号：TB34[一般工业技术—材料科学与工程]